Thermoelectric properties of lattice-matched AlInN alloy grown by metal organic chemical vapor deposition

被引:76
|
作者
Tong, Hua [1 ]
Zhang, Jing [1 ]
Liu, Guangyu [1 ]
Herbsommer, Juan A. [1 ]
Huang, G. S. [1 ]
Tansu, Nelson [1 ]
机构
[1] Lehigh Univ, Dept Elect & Comp Engn, Ctr Opt Technol, Bethlehem, PA 18015 USA
基金
美国国家科学基金会;
关键词
aluminium compounds; electrical conductivity; electrical resistivity; III-V semiconductors; indium compounds; MOCVD; Seebeck effect; semiconductor thin films; thermal conductivity; THERMAL-CONDUCTIVITY; INN; FILMS; AL1-XINXN; MOVPE; GAN;
D O I
10.1063/1.3489086
中图分类号
O59 [应用物理学];
学科分类号
摘要
Thermoelectric properties of lattice-matched AlInN grown by metal organic chemical vapor deposition were measured and analyzed. The n-type Al0.83In0.17N alloy exhibited thermal conductivity of 4.87 W/(m K) measured by 3 omega differential method. The Seebeck coefficient of n-Al0.83In0.17N was measured as -6.012x10(-4) V/K by thermal gradient method. The sheet resistivity of n-Al0.83In0.17N was measured by using Van der Pauw method, and the electrical conductivity was measured as 2.38x10(4)/(Omega m). The thermoelectric figure of merit (Z*T) of n-type Al0.83In0.17N was measured as 0.532 at room temperature (T=300 K). The finding indicates lattice-matched AlInN alloy on GaN as excellent material candidate for thermoelectric application. (c) 2010 American Institute of Physics. [doi:10.1063/1.3489086]
引用
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页数:3
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