Simulated [111] Si-SiGe terahertz quantum cascade laser

被引：24
|
作者：
Lever, L. [1 ]
Valavanis, A. [1 ]
Ikonic, Z. [1 ]
Kelsall, R. W. [1 ]
机构：
[1] Univ Leeds, Inst Microwaves & Photon, Sch Elect & Elect Engn, Leeds LS2 9JT, W Yorkshire, England
来源：
APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 02期
基金：
英国工程与自然科学研究理事会;
关键词：
D O I：
10.1063/1.2836023
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The prospect of developing a silicon laser has long been an elusive goal, mainly due to the indirect band gap and large effective carrier masses. We present a design for a terahertz intersubband laser grown on the [111] crystal plane and simulate performance using a rate equation method including scattering due to alloy disorder, interface roughness, carrier-phonon, and Coulombic interactions. We predict gain greater than 40 cm(-1) and a threshold current density of 70 A/cm(2).
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页数：3
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