Tunneling magnetoresistance in a mn δ-doped GaAs/AlAs/MnAs heterostructure

被引：0
|
作者：
Nakane, Ryosho [1 ]
Kondo, Jun [1 ]
Tanaka, Masaaki [1 ]
机构：
[1] Univ Tokyo, Dept Elect Engn, Bunkyo Ku, Tokyo 1138656, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2007年 / 46卷 / 29-32期
关键词：
Mn delta-doped GaAs multilayer; epitaxial magnetic heterostructure; tunneling magnetoresistance; magnetic anisotropy; MnAs;
D O I：
10.1143/JJAP.46.L755
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We studied the tunneling magnetoresistance (TMR) of a hybrid heterostructure consisting of Mn delta-doped GaAs/AlAs/MnAs, and compared with that of a (Ga,Mn)As/AlAs/MnAs heterostructure. The former heterostructure showed a maximum TMR ratio of 43.9% at 2.6 K, indicating that the carriers in the Mn delta-doped GaAs are spin-polarized. Furthermore, the magnetic properties of both heterostructures were investigated through the TMR characteristics with varying the direction of the applied magnetic field. The difference in anisotropic behavior between the two heterostructures could be due to the difference in the Mn distribution in the Mn-doped GaAs layers.
引用
收藏
页码：L755 / L757
页数：3
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