Dielectric screening in extended systems using the self-consistent Sternheimer equation and localized basis sets

被引:12
|
作者
Huebener, Hannes [1 ]
Perez-Osorio, Miguel A. [1 ,2 ]
Ordejon, Pablo [2 ]
Giustino, Feliciano [1 ]
机构
[1] Univ Oxford, Dept Mat, Oxford OX1 3PH, England
[2] Ctr Invest Nanociencia & Nanotecnol CIN2 CSIC ICN, Bellaterra, Spain
来源
PHYSICAL REVIEW B | 2012年 / 85卷 / 24期
基金
欧洲研究理事会;
关键词
BAND-STRUCTURE CALCULATIONS; AB-INITIO CALCULATIONS; ORBITAL BASIS-SETS; QUASI-PARTICLE; PERTURBATION-THEORY; GREENS-FUNCTION; DENSITY-MATRIX; ELECTRON-GAS; SEMICONDUCTORS; INSULATORS;
D O I
10.1103/PhysRevB.85.245125
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We develop a first-principles computational method for investigating the dielectric screening in extended systems using the self-consistent Sternheimer equation and localized nonorthogonal basis sets. Our approach does not require the explicit calculation of unoccupied electronic states, uses only two-center integrals, and has a theoretical scaling of order O(N-3). We demonstrate this method by comparing our calculations for silicon, germanium, diamond, and LiCl with reference plane-wave calculations. We show that accuracy comparable to that of plane-wave calculations can be achieved via a systematic optimization of the basis set.
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页数:5
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