High Performance (001) β-Ga2O3 Schottky Barrier Diode

被引：0
|
作者：
Wang, Y. G. [1 ]
Lv, Y. J. [1 ]
Zhou, X. Y. [1 ]
Guo, H. Y. [1 ]
Song, X. B. [1 ]
Tan, X. [1 ]
Liang, S. X. [1 ]
Fang, Y. L. [1 ]
Feng, Z. H. [1 ]
Cai, S. J. [1 ]
机构：
[1] Hebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit, Hezuo Rd, Shijiazhuang, Hebei, Peoples R China
来源：
2018 15TH CHINA INTERNATIONAL FORUM ON SOLID STATE LIGHTING: INTERNATIONAL FORUM ON WIDE BANDGAP SEMICONDUCTORS CHINA (SSLCHINA: IFWS) | 2018年
基金：
中国国家自然科学基金;
关键词：
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
A schottky barrier diode (SBD) without field plate was fabricated on a Si-doped N-Ga2O3 drift layer, which was grown by halide vapor phase epitaxy (HVPE) on a heavily Sn-doped (001) beta-Ga2O3 substrate. The thickness and concentration of N-drift layer were 5 mu m and 3.8x10(16) cm(-3), respectively. The reverse breakdown voltage (BV) and specific on-resistance (R-on) of the fabricated Ga2O3 SBD were 825 V and 3.5 m Omega.cm(2), respectively, leading to a high Baliga figure-of-merit (BV2/R-on) of 194.5 MW.cm(-2). Besides, a high current on/off ratio of 4.2x10(10) was obtained.
引用
收藏
页码：103 / 104
页数：2
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