Growth of Structurally Perfect Diamond Single Crystals at High Pressures and Temperatures. Review

被引：17

作者：

Lysakovskyi, V. V. ^{[1
]}

Novikov, N. V. ^{[1
]}

Ivakhnenko, S. A. ^{[1
]}

Zanevskyy, O. A. ^{[1
]}

Kovalenko, T. V. ^{[1
]}

机构：

[1] Natl Acad Sci Ukraine, Bakul Inst Superhard Mat, Vul Avtozavodska 2, UA-04074 Kiev, Ukraine

来源：

JOURNAL OF SUPERHARD MATERIALS | 2018年 / 40卷 / 05期

关键词：

diamond single crystals; high pressure apparatus; growth systems; temperature gradient method; GRAPHITE; IMPURITY;

D O I：

10.3103/S1063457618050039

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The investigations performed at high pressures and high temperatures (HTHP crystallization) have permitted clarifying the mechanism of phase transformations and carbon transport in solvent metals for diamond growth and elaborating methods for growing large-size structurally perfect diamond single crystals of types Ib, IIa, and IIb. The findings have provided the basis for the process of production of diamonds for applications in electronics, laser technology, precision machining operations, well drilling tools. The use of a large-volume six-punch high pressure apparatus makes it possible to grow diamond single crystals with a higher efficiency. It is estimated that this apparatus is capable of producing annually at least 1 mln carats of structurally perfect crystals of required types for various applications.

引用

页码：315 / 324

页数：10

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