On the light absorption in amorphous semiconductors

被引：0

作者：

Baranovskii, SD ^{[1
]}

Kohary, K

Thomas, P

Yamasaki, S

机构：

[1] Univ Marburg, Dept Phys, D-35032 Marburg, Germany

[2] Univ Marburg, Ctr Mat Sci, D-35032 Marburg, Germany

[3] AIST, ASRC, Tsukuba, Ibaraki 3058562, Japan

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2003年 / 14卷 / 10-12期

关键词：

D O I：

10.1023/A:1026135222085

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Recent measurements of optical absorption in doped amorphous semiconductors (a-Si: H and a-Ge : H) have revealed that long-range potential fluctuations play a decisive role in the absorption mechanism. The theory of such effects was initially developed for crystalline semiconductors, and it is usually not applied in the appropriate form for the interpretation of experimental data in amorphous materials. We use this theory in the analysis of optical-absorption data for amorphous semiconductors, and show its quantitative agreement with experimental results. (C) 2003 Kluwer Academic Publishers.

引用

页码：707 / 710

页数：4

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