Infrared optical constants and dielectric response functions of silicon nitride and oxynitride films

被引:0
|
作者
Gunde, MK
Macek, M
机构
[1] Natl Inst Chem, SI-1001 Ljubljana, Slovenia
[2] Fac Elect Engn, Ljubljana, Slovenia
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D O I
10.1002/1521-396X(200102)183:23.0.CO;2-B
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The complex refractive indices of thick plasma-enhanced chemical vapour deposited silicon nitride and oxynitride films were determined within the infrared spectral region (4000-400 cm(-1) i.e. 2.5-25 mum) and used further to obtain their complex dielectric response functions. The imaginary part, i.e. the so-called energy-loss-function was analysed to get accurate phonon data of the amorphous layer. This way, TO-phonon frequencies, half-widths, and intensities of characteristic infrared absorptions were determined for each film. The dependence of the obtained data upon the variation of chemical/physical structure of the amorphous lattice was discussed.
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页码:439 / 449
页数:11
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