Specific Features of the Electronic and Atomic Structures of Silicon Single Crystals in the Aluminum Matrix

被引：1

作者：

Terekhov, V. A. ^{[1
]}

Lazaruk, S. K. ^{[2
]}

Usol'tseva, D. S. ^{[1
]}

Leshok, A. A. ^{[2
]}

Katsuba, P. S. ^{[2
]}

Zanin, I. E. ^{[1
]}

Spirin, D. E. ^{[1
]}

Stepanova, A. A. ^{[1
]}

Turishchev, S. Yu. ^{[1
]}

机构：

[1] Voronezh State Univ, Voronezh 394006, Russia

[2] Belarusian State Univ Informat & Radioelect, Minsk 220013, BELARUS

来源：

PHYSICS OF THE SOLID STATE | 2014年 / 56卷 / 12期

关键词：

Valence Band; Aluminum Matrix; Silicon Nanocrystals; Nanostructured Silicon; Amorphous Silicon Layer;

D O I：

10.1134/S1063783414120336

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Films of Al-Si nanocomposites produced by magnetron evaporation of a complex target onto a silicon substrate have been investigated using scanning electron microscopy, X-ray diffraction, ultrasoft X-ray emission spectroscopy, and X-ray absorption near edge structure spectroscopy. It has been found that silicon inclusions are nanocrystals with the mean size of 20-25 nm, with the surface covered by an amorphous silicon layer. The presence of the aluminum matrix in the initial films changes their band structures, in particular, near the bottom of the valence band. After the removal of aluminum, the structure of the valence band becomes identical to that in the bulk material and the structure of the conduction band indicates the presence of a disordered surface layer with a thickness of similar to 5 nm.

引用

页码：2543 / 2547

页数：5

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