Adsorbate-induced reconstruction of an array of atomic wires: Indium on the Si(553)-Au surface

被引:10
|
作者
Ahn, J. R. [1 ]
Kang, P. G. [2 ]
Byun, J. H. [2 ]
Yeom, H. W. [2 ]
机构
[1] Sungkyunkwan Univ, Adv Inst Nano Technol, BK21 Phys Res Div, Suwon 440746, South Korea
[2] Yonsei Univ, Inst Phys & Appl Phys, Ctr Atom Wires & Layers, Seoul 120746, South Korea
关键词
D O I
10.1103/PhysRevB.77.035401
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The In-induced surface reconstruction of the Si(553)-Au surface has been studied using the combined experiment of low-energy-electron diffraction, scanning tunneling microscopy, and angle-resolved photoemission spectroscopy. Low-energy-electron diffraction revealed that In adsorbates interact actively with the surface above 150 degrees C, widening the terraces uniformly and forming a new atomic wire array. This wire structure has a x2 period along the wires, where the phase coherence across the wires was much better than that of the pristine Si(553)-Au surface. The In-induced uniform terrace widening was confirmed by scanning tunneling microscopy. More interestingly, the In adsorbates alter the metallic atomic wires of the Si(553)-Au surface with highly dispersive one-dimensional bands into insulating ones with still large dispersion.
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页数:5
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