Growth of a lattice-matched GaAsPN p-i-n junction on a Si substrate for monolithic III-V/Si tandem solar cells

被引：15

作者：

Yamane, Keisuke ^{[1
]}

Goto, Masaya ^{[1
]}

Takahashi, Kenjiro ^{[1
]}

Sato, Kento ^{[1
]}

Sekiguchi, Hiroto ^{[1
]}

Okada, Hiroshi ^{[1
,2
]}

Wakahara, Akihiro ^{[1
,2
]}

机构：

[1] Toyohashi Univ Technol, Dept Elect & Elect Informat Engn, Toyohashi, Aichi 4418580, Japan

[2] Toyohashi Univ Technol, Elect Inspired Interdisciplinary Res Inst EIIRIS, Toyohashi, Aichi 4418580, Japan

来源：

APPLIED PHYSICS EXPRESS | 2017年 / 10卷 / 07期

基金：

日本学术振兴会;

关键词：

GAP; THICKNESS;

D O I：

10.7567/APEX.10.075504

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A p-i-n GaAs0.75P0.19N0.06 structure lattice-matched to Si was realized on a 2-in. Si (001) substrate for monolithic tandem solar cells. The sample structure had mirror-like surfaces without any indication of pinholes or microcracks. X-ray diffraction results showed that all the layers were coherently grown on the Si substrate. Transmission electron microscopy results evidently showed that a dislocation-free device structure was grown on the Si substrate. Finally, current-voltage characteristics showed rectifying properties with low reverse saturation current, which was indicative of the high crystallinity of the device layer. (C) 2017 The Japan Society of Applied Physics

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页数：4

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