Growth of a lattice-matched GaAsPN p-i-n junction on a Si substrate for monolithic III-V/Si tandem solar cells

被引：15
|
作者：
Yamane, Keisuke [1 ]
Goto, Masaya [1 ]
Takahashi, Kenjiro [1 ]
Sato, Kento [1 ]
Sekiguchi, Hiroto [1 ]
Okada, Hiroshi [1 ,2 ]
Wakahara, Akihiro [1 ,2 ]
机构：
[1] Toyohashi Univ Technol, Dept Elect & Elect Informat Engn, Toyohashi, Aichi 4418580, Japan
[2] Toyohashi Univ Technol, Elect Inspired Interdisciplinary Res Inst EIIRIS, Toyohashi, Aichi 4418580, Japan
来源：
APPLIED PHYSICS EXPRESS | 2017年 / 10卷 / 07期
基金：
日本学术振兴会;
关键词：
GAP; THICKNESS;
D O I：
10.7567/APEX.10.075504
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A p-i-n GaAs0.75P0.19N0.06 structure lattice-matched to Si was realized on a 2-in. Si (001) substrate for monolithic tandem solar cells. The sample structure had mirror-like surfaces without any indication of pinholes or microcracks. X-ray diffraction results showed that all the layers were coherently grown on the Si substrate. Transmission electron microscopy results evidently showed that a dislocation-free device structure was grown on the Si substrate. Finally, current-voltage characteristics showed rectifying properties with low reverse saturation current, which was indicative of the high crystallinity of the device layer. (C) 2017 The Japan Society of Applied Physics
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页数：4
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