AlAs quantum wells: Transport properties of the two-dimensional electron gas

被引：8
|
作者：
Gold, A. [1 ]
Marty, R. [1 ]
机构：
[1] CEMES, CNRS, F-31055 Toulouse, France
来源：
JOURNAL OF APPLIED PHYSICS | 2007年 / 102卷 / 08期
关键词：
D O I：
10.1063/1.2798591
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We present a theory of the transport properties at zero temperature of the electron gas in AlAs. The two-dimensional electron gas in AlAs has a valley degeneracy g(v)=1 for a quantum well width L < L-c=55 A and a valley degeneracy of g(v)=2 for L > L-c. We calculate the mobility for interface-roughness scattering and for impurity scattering. In addition we discuss the single-particle relaxation time (Dingle temperature) and the magnetoresistance in a parallel magnetic field. We discuss how transport measurements can be used to get information about microscopic parameters of disorder and many-body effects. Experimental results obtained for the mobility, the magnetoresistance, and the metal-insulator transition are discussed and compared with our theory. (C) 2007 American Institute of Physics.
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页数：7
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