A novel two-step etching to suppress the charging damages during metal etching employing helicon wave plasma

被引：5

作者：

Cheng, HC ^{[1
]}

Lin, W

Kang, TK

Perng, YC

Dai, BT

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan

[2] Natl Chiao Tung Univ, Inst Elect, Hsinchu, Taiwan

[3] Natl Nano Device Lab, Hsinchu, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 1998年 / 19卷 / 06期

关键词：

D O I：

10.1109/55.678537

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A two-step etching has been performed to eliminate the plasma charging damages during helicon-wave plasma metal etching without selectivity loss, This technique utilized a normal etching recipe to remove the Al film and followed by an optimized etching recipe for the overetching step. By increasing the bias power and decreasing the source power, the optimum etching recipe can cause the plasma more directionally and reduce the Al charging damages. Eventually, the damage mechanism was also reported.

引用

页码：183 / 185

页数：3