A transition between NRD guide and microstrip line at 60 GHz

A transition between an NRD guide, suitable for construction of high performance millimeter-wave integrated circuits, and a microstrip line, being used to mount semiconductor devices such as HEMT, HBT and MMIC, was developed at 60 GHz. The main emphasis was placed on the manner of field matching between the NRD guide and the microstrip line. We propose adoption of this a new transition structure employing a vertical strip line, which can be easily coupled to the NRD guide, and a coaxial line connected to the microstrip line. Moreover, we applied a packaging structure with a choke circuit for the microstrip line to prevent undesired leakage between the NRD guide and the microstrip line. The insertion loss of the fabricated transition was measured to be less than 0.5 dB in the bandwidth of 3 GHz at a center frequency of 60.5 GHz. The transition was applied to MMIC amplifier integration in the NRD guide at 60 GHz. The forward and reverse gains were measured to be 15 dB and -20 dB, respectively, at 60 GHz.