Erbium-doped silicon and porous silicon for optoelectronics

被引：21

作者：

Reed, GT

Kewell, AK

机构：

[1] Dept. of Electron. and Elec. Eng., University of Surrey, Guildford

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1996年 / 40卷 / 2-3期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1016/0921-5107(96)01657-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Silicon forms the backbone of the microelectronics industry, and possibly, of the optoelectronics industry, hitherto dominated by III/V materials. One of the remaining goals is to build an optical source in silicon. Erbium exhibits luminescent 1.54 mu m intra-4f transitions in both silicon and porous silicon. This paper reviews the work which has been carried out in this held and discusses some possible additional applications of erbium-doped silicon in optoelectronics, such as a novel on-chip temperature sensor.

引用

页码：207 / 215

页数：9

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