The applications of plasma technologies have been increased over the last years in material processing, spectroscopy, surface treatment, rocket propulsion, vapour deposition techniques, etching and deposition in semiconductor technology, and analytical chemistry to name a few. Different techniques and applicators have been developed and tested too, in order to meet particular applications. Plasmas are generated by passing a current, a radio wave or microwave through a gas in order to ionise it and obtain the desired characteristics. This paper presents a microwave induced plasma source set-up for the generation of plasmas. Microwave power, gas flow rate and plasma temperature at atmospheric pressure were the: main process input parameter used in order to generate plasmas with desired properties, at microscopic and macroscopic level. Argon gas has been utilised for the plasma generation.