Atomic and electronic structures of Cd0.96Zn0.04Te(110) surface

被引：0
|
作者：
Zha, GQ [1 ]
Jie, WQ
Zhang, WH
Li, Q
Xu, FQ
机构：
[1] Northwestern Polytech Univ, State Key Lab Solidificat Proc, Xian 710072, Peoples R China
[2] Univ Sci & Technol, Natl Synchrotron Radiat Lab, Hefei 230029, Peoples R China
来源：
CHINESE PHYSICS LETTERS | 2005年 / 22卷 / 09期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
X-Ray diffraction is used to analyse the lattice structure of Cd0.96Zn0.04Te (CZT), and the lattice constant is measured to be 0.647nm. The atomic structure of the clean CZT(110) surface obtained by Ar+ etching in vacuum is observed by low-energy electron diffraction, where no surface reconstruction is discovered. Angle-resolved photoemission spectroscopy was used to characterize the surface state of the clean CZT (110) surface, by which we find a 1.5-eV-wide surface band with the peak at 0.9eV below the Fermi energy containing about 6.9 x 10(14) electrons/cm(2), approximately one electron per surface atom.
引用
收藏
页码：2357 / 2359
页数：3
相关论文
共 50 条
  • [21] ELECTRONIC-STRUCTURE IN CD0.96ZN0.04TE COMPOUND - A SYNCHROTRON-RADIATION PHOTOEMISSION-STUDY
    YANG, FY
    FANG, RC
    XU, PS
    XU, SH
    CHINESE PHYSICS LETTERS, 1994, 11 (10): : 642 - 644
  • [22] Homogenization of zinc distribution in vertical Bridgman grown Cd0.96Zn0.04Te crystals
    J. K. Radhakrishnan
    B. S. Sunderseshu
    Meenakshi Srivastava
    G. L. Seth
    R. Raman
    R. C. Narula
    R. K. Bagai
    Bulletin of Materials Science, 2001, 24 : 659 - 663
  • [23] Studies on polycrystalline Cd0.96Zn0.04Te thin films prepared by vacuum evaporation
    Sridharan, M
    Narayandass, SK
    Mangalaraj, D
    Lee, HC
    VACUUM, 2003, 70 (04) : 511 - 522
  • [24] Quenching of the fluorescence background in Cd0.96Zn0.04Te Raman spectrum at low temperatures
    Pei, HY
    Fang, JX
    ACTA PHYSICA SINICA, 2001, 50 (05) : 968 - 972
  • [25] Reconstruction, morphology, and stoichiometry of CdTe(001) and Cd0.96Zn0.04Te(001) surfaces
    Neureiter, H
    Spranger, S
    Schneider, M
    Winkler, U
    Sokolowski, M
    Umbach, E
    SURFACE SCIENCE, 1997, 388 (1-3) : 186 - 200
  • [26] REMOVAL OF OXYGEN AND REDUCTION OF CARBON CONTAMINATION ON (100) CD0.96ZN0.04TE SUBSTRATES
    WU, YS
    BECKER, CR
    WAAG, A
    BICKNELLTASSIUS, RN
    LANDWEHR, G
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (01) : S293 - S295
  • [27] Cd0.96Zn0.04Te晶体的化学腐蚀及其极性鉴别
    莫玉东
    李德修
    云南大学学报(自然科学版), 1998, (自然科学版)
  • [28] Dislocation-induced IR absorption and photoluminescence emission in Cd0.96Zn0.04Te
    Zha, Gangqiang
    Jie, Wanqi
    Tan, Tingting
    Wang, Linghang
    Zeng, Dongmei
    MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 2006, 432 (1-2): : 126 - 128
  • [29] Cd0.96Zn0.04Te晶体的化学腐蚀及其极性鉴别
    莫玉东
    李德修
    云南大学学报(自然科学版), 1998, (S1) : 117 - 119+123
  • [30] CHANNELING ANALYSIS OF MISMATCH STRAIN IN HETEROEPITAXIAL CDTE ON CD0.96ZN0.04TE(001)
    CHAMI, AC
    LIGEON, E
    FONTENILLE, J
    DANIELOU, R
    JOURNAL OF APPLIED PHYSICS, 1987, 62 (09) : 3718 - 3721
12345