Defects in bulk GaN and homoepitaxial layers

被引：0
|
作者：
Liliental-Weber, Z [1 ]
机构：
[1] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Ctr Adv Mat, Berkeley, CA 94720 USA
来源：
GALLIUM NITRIDE (GAN) II | 1999年 / 57卷
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：129 / 156
页数：28
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