Fabrication of a terahertz quantum-cascade laser with a double metal waveguide based on multilayer GaAs/AlGaAs heterostructures

被引:17
|
作者
Khabibullin, R. A. [1 ]
Shchavruk, N. V. [1 ]
Pavlov, A. Yu. [1 ]
Ponomarev, D. S. [1 ]
Tomosh, K. N. [1 ]
Galiev, R. R. [1 ]
Maltsev, P. P. [1 ]
Zhukov, A. E. [2 ,3 ]
Cirlin, G. E. [2 ,3 ]
Zubov, F. I. [2 ]
Alferov, Zh. I. [2 ,3 ]
机构
[1] Russian Acad Sci, Inst Ultrahigh Frequency Semicond Elect, Nagornyi Pr 7,Str 5, Moscow 117105, Russia
[2] St Petersburg Acad Univ, Nanotechnol Res & Educ Ctr, Russian Acad Sci, Ul Khlopina 8-3, St Petersburg 194021, Russia
[3] Russian Acad Sci, St Petersburg Sci Ctr, Univ Skaya Nab 5, St Petersburg 199034, Russia
基金
俄罗斯基础研究基金会;
关键词
FREQUENCY; THZ;
D O I
10.1134/S1063782616100134
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The Postgrowth processing of GaAs/AlGaAs multilayer heterostructures for terahertz quantumcascade lasers (QCLs) are studied. This procedure includes the thermocompression bonding of In-Au multilayer heterostructures with a doped n (+)-GaAs substrate, mechanical grinding, and selective wet etching of the substrate, and dry etching of QCL ridge mesastripes through a Ti/Au metallization mask 50 and 100 mu m wide. Reactive-ion-etching modes with an inductively coupled plasma source in a BCl3/Ar gas mixture are selected to obtain vertical walls of the QCL ridge mesastripes with minimum Ti/Au mask sputtering.
引用
收藏
页码:1377 / 1382
页数:6
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