Enhancement of Ferroelectricity in Neodymium- and Vanadium-Codoped Na0.5Bi4.5Ti4O15 Thin Films

被引：3

作者：

Do, Dalhyun ^{[1
]}

Kim, Jin Won ^{[1
]}

Kim, Sang Su ^{[1
]}

机构：

[1] Changwon Natl Univ, Dept Phys, Chang Won 641773, Gyungnam, South Korea

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 2010年 / 93卷 / 11期

关键词：

LARGE REMANENT POLARIZATION; BISMUTH TITANATE; MEMORIES; FATIGUE;

D O I：

10.1111/j.1551-2916.2010.04080.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Ferroelectric Na0.5Bi3.99Nd0.5Ti3.97V0.03O15 (NaBNdTiV) thin films were prepared by a chemical solution deposition method and annealed at 750 degrees C under oxygen atmosphere for crystallization. Compared with Na0.5Bi4.5Ti4O15 thin films, the NaB NdTiV thin films exhibit better ferroelectric properties. The values of remnant polarization (2P(r)) and coercive field (2E(c)) of the NaBNdTiV thin-film capacitor were 54 mu C/cm(2) and 248 kV/cm at an applied electric field of 652 kV/cm, respectively. The NaBNdTiV thin film showed good fatigue endurance. An 8% decrease in switchable polarization was observed after 1.44 x 10(10) cycles. Leakage current density of the NaBNdTiV thin-film capacitor was 8.07 x 10(-7) A/cm at 100 kV/cm.

引用

页码：3545 / 3548

页数：4

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