Piezoelectric response of charged non-180° domain walls in ferroelectric ceramics

被引:21
|
作者
Li, Zhanfang [1 ]
Wu, Hao [1 ]
Cao, Wenwu [1 ,2 ]
机构
[1] Harbin Inst Technol, Condensed Matter Sci & Technol Inst, Harbin 150001, Peoples R China
[2] Penn State Univ, Mat Res Inst, University Pk, PA 16802 USA
关键词
COMPUTER-SIMULATION; BARIUM-TITANATE; COEFFICIENTS;
D O I
10.1063/1.3679084
中图分类号
O59 [应用物理学];
学科分类号
摘要
Charged domain walls may have lower energy than charge neutral walls when large amount of aliovalent doping are present or when there are substantial amount of charged defects in the system. Charged domain walls can produce much larger contribution to functional properties than charge neutral domain walls because they are energetically less stable. If there are regions of charged domain walls in ferroelectric ceramic, it can enhance the extrinsic contribution to the piezoelectric and dielectric properties. We have performed a theoretical analysis on charged domain walls based on the time dependent Landau-Ginzburg model, assuming there are charge defects from aliovalent doping to locally stabilize such charged domain walls. Using BaTiO3 and PZT as examples, we have studied the stability of charged walls with defect density and found that piezoelectric properties can be greatly enhanced by charged walls if the charge density rho is lower than the charges needed to produce local charge balance. If the charge density is equal or more than the amount needed for electrical balance, the walls are pinned, which causes the reduction of piezoelectric effects. (C) 2012 American Institute of Physics. [doi:10.1063/1.3679084]
引用
收藏
页数:5
相关论文
共 50 条
  • [31] Non-180° domain contribution in electric-field-induced strains of PZT ceramics measured by a Mach-Zehnder interferometer
    Tsurumi, T
    Ikeda, N
    Ohashi, N
    [J]. JOURNAL OF THE CERAMIC SOCIETY OF JAPAN, 1998, 106 (11) : 1062 - 1066
  • [32] Polarization driven conductance variations at charged ferroelectric domain walls
    Pawlik, A. -S.
    Kaempfe, T.
    Haussmann, A.
    Woike, T.
    Treske, U.
    Knupfer, M.
    Buechner, B.
    Soergel, E.
    Streubel, R.
    Koitzsch, A.
    Eng, L. M.
    [J]. NANOSCALE, 2017, 9 (30) : 10933 - 10939
  • [33] Charged domain walls in improper ferroelectric hexagonal manganites and gallates
    Smabraten, Didrik R.
    Meier, Quintin N.
    Skjaervo, Sandra H.
    Inzani, Katherine
    Meier, Dennis
    Selbach, Sverre M.
    [J]. PHYSICAL REVIEW MATERIALS, 2018, 2 (11):
  • [34] Zigzag charged domain walls in ferroelectric PbTiO3
    Marton, Pavel
    Goncalves, Mauro A. P.
    Pasciak, Marek
    Koerbel, Sabine
    Chumchal, Venceslav
    Plesinger, Martin
    Klic, Antonin
    Hlinka, Jirka
    [J]. PHYSICAL REVIEW B, 2023, 107 (09)
  • [35] Static conductivity of charged domain walls in uniaxial ferroelectric semiconductors
    Eliseev, E. A.
    Morozovska, A. N.
    Svechnikov, G. S.
    Gopalan, Venkatraman
    Shur, V. Ya.
    [J]. PHYSICAL REVIEW B, 2011, 83 (23):
  • [36] Locking of electric-field-induced non-180° domain switching and phase transition in ferroelectric materials upon cyclic electric fatigue
    Liu, M
    Hsia, KJ
    [J]. APPLIED PHYSICS LETTERS, 2003, 83 (19) : 3978 - 3980
  • [37] STRUCTURE OF 180-DEGREES DOMAIN-WALLS IN FERROELECTRIC THIOUREA
    AOYAMA, J
    SUZUKI, S
    TAKAGI, M
    [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1992, 61 (10) : 3613 - 3624
  • [38] Study of the structure of ferroelectric domain walls in barium titanate ceramics
    Normand, L
    Kilaas, R
    Montardi, Y
    Thorel, A
    [J]. INTERGRANULAR AND INTERPHASE BOUNDARIES IN MATERIALS, PT 1, 1996, 207- : 317 - 320
  • [39] Magnetoresistance of non-180 degrees domain wall in the presence of electron-photon interaction
    Majidi, Roya
    [J]. INTERNATIONAL NANO LETTERS, 2013, 3 (01)
  • [40] Field-induced Strain Memory with Non-180° Domain-reorientation Control
    Kadota, Yoichi
    Hosaka, Hiroshi
    Morita, Takeshi
    [J]. JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2010, 57 (04) : 902 - 906