Ultra low-dielectric-constant methylated mesoporous silica films with high hydrophobicity and stability

被引：10
|
作者：
Yuan, Hao [2 ,3 ]
Xu, Jiaqiang [1 ]
Xie, Lili [3 ]
机构：
[1] Shanghai Univ, Dept Chem, Shanghai 200444, Peoples R China
[2] Shanghai Univ, Dept Phys, Shanghai 200444, Peoples R China
[3] Shanghai Second Polytech Univ, Dept Environm Engn, Shanghai 201209, Peoples R China
来源：
MATERIALS CHEMISTRY AND PHYSICS | 2011年 / 129卷 / 03期
关键词：
Mesoporous silica films; Methyl-functionalization; Ultra low-k materials; Structural stability; THIN-FILMS;
D O I：
10.1016/j.matchemphys.2011.06.006
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Vapor phase treatment with tetraethyl orthosilicate (TEOS) is used to improve the performance of methylated mesoporous silica films spin-coated on silicon wafers. Subsequent calcination leads to formation of ultra low dielectric-constant (k) films with high hydrophobicity and structural stability. The k value of the films is about 1.75, and remains as low as 1.82 in an 80%-relative-humidity environment over seven days. Mechanical strength (elastic modulus and hardness) is high enough to withstand the stresses that occur during the chemical mechanical polishing and wire bonding process (E = 10.9 GPa). Effects of the methyl group and TEOS vapor treatment on the structural stability and hydrophobicity are systematically studied. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码：1195 / 1200
页数：6
相关论文
共 50 条
  • [31] Mechanical property analyses of porous low-dielectric-constant films for stability evaluation of multilevel-interconnect structures
    Chang, SY
    Chang, HL
    Lu, YC
    Jang, SM
    Lin, SJ
    Liang, MS
    THIN SOLID FILMS, 2004, 460 (1-2) : 167 - 174
  • [32] Copper metallization of low-dielectric-constant a-SiCOF films for ULSI interconnects
    Ding, SJ
    Zhang, QQ
    Zhang, DW
    Wang, JT
    Lee, WW
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2001, 13 (31) : 6595 - 6608
  • [33] Deposition of fluorinated amorphous carbon thin films as a low-dielectric-constant material
    Han, SS
    Kim, HR
    Bae, BS
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1999, 146 (09) : 3383 - 3388
  • [34] High-temperature creep of low-dielectric-constant glass composites
    Jean, JH
    JOURNAL OF MATERIALS RESEARCH, 1996, 11 (08) : 2098 - 2103
  • [35] Ultra low-dielectric-constant materials for 65nm technology node and beyond
    Cui, H
    Moore, D
    Carter, R
    Eda, M
    Burke, P
    Gidley, D
    Peng, HG
    MATERIALS, TECHNOLOGY AND RELIABILITY FOR ADVANCED INTERCONNECTS AND LOW-K DIELECTRICS-2004, 2004, 812 : 281 - 290
  • [36] Fluorinated Amorphous Carbon as a Low-Dielectric-Constant Interlayer Dielectric
    Kazuhiko Endo
    MRS Bulletin, 1997, 22 : 55 - 58
  • [37] Synthesis of organically modified mesoporous silica as a low dielectric constant intermetal dielectric
    Yu, SZ
    Wong, TKS
    Pita, K
    Hu, X
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (05): : 2036 - 2042
  • [38] Fluorinated amorphous carbon as a low-dielectric-constant interlayer dielectric
    MRS Bull, 10 (55-58):
  • [39] Low Dielectric Constant and Hydrophobic Nanoporous Silica Films
    Shen Jun
    Zhu Yumei
    Lin Xuejing
    Wu Guangming
    Zhou Bin
    Ni Xingyuan
    Yao Lanfang
    Wang Guoqing
    Wang Peiqing
    Wang Qingfeng
    Niu Xixian
    2008 2ND IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1-3, 2008, : 924 - +
  • [40] Preparation of nanoporous silica films with low dielectric constant
    Wang, J
    Zhang, CR
    Feng, H
    RARE METAL MATERIALS AND ENGINEERING, 2004, 33 : 141 - 144
12345