Reliability investigations in micromechanical devices

被引：1

作者：

Mescheder, UM ^{[1
]}

Kronast, W ^{[1
]}

Naychuk, N ^{[1
]}

机构：

[1] Univ Appl Sci, Inst Appl Res, Dept Comp & Elect Engn, D-78120 Furtwangen, Germany

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 2004年 / 110卷 / 1-3期

关键词：

reliability; fatigue and crack propagation in crystalline silicon; lifetime;

D O I：

10.1016/j.sna.2003.10.054

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Fatigue limited lifetime of micromechanical structures has been investigated. To determine the maximum cycle number up to failure a modified Paris equation has been used to model crack growth under load. Test structures (cantilever beams) with well-defined pre-cracks were externally loaded at resonance frequency. Single crystalline silicon as functional material (bulk micromachining) was investigated. Measured and simulated critical stress intensity factors are strongly correlated for all investigated test structures and for different crack lengths showing the validity of the used model. Lifetime decreases exponentially for loads approaching a critical stress intensity. Using the experimental results determined at test structures and the simulation model, fatigue limited lifetime of micromechanical device with typical, process induced crack distribution can be extrapolated. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：150 / 156

页数：7

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