RBS, study of amorphous silicon carbide films deposited by PECVD

被引：3

作者：

Huran, J

Hotovy, I

Kobzev, AP

Balalykin, NI

机构：

[1] Slovak Acad Sci, Inst Elect Engn, Bratislava 84239, Slovakia

[2] Slovak Univ Technol Bratislava, Fac Elect Engn & Informat Technol, Bratislava 84104, Slovakia

[3] Joint Inst Nucl Res, Dubna 141980, Moscow Region, Russia

来源：

CZECHOSLOVAK JOURNAL OF PHYSICS | 2004年 / 54卷

关键词：

amorphous silicon carbide; thin films; plasma deposition;

D O I：

10.1007/BF03166522

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We present properties of nitrogen-doped amorphous silicon carbide films that were grown by a plasma enhanced chemical vapour deposition (PECVD) technique and annealed by pulsed electron beam. Samples with different amounts of N were achieved by a small addition of ammonia NH3 into the gas mixture of silane SiH4 and methane CH4, which were directly introduced into the reaction chamber. The actual amount of nitrogen in the SiC films was determined by Rutherford backscattering spectrometry (RBS). A simulation of the RBS spectra was used to calculate the concentration of carbon, silicon and nitrogen.

引用

页码：C1006 / C1010

页数：5

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