High tunable BaSnxTi1-xO3 thin films for microwave applications

被引：8
|
作者：
Tumarkin, A. V. [1 ]
Stozharov, V. M. [2 ]
Altynnikov, A. G. [1 ]
Gagarin, A. G. [1 ]
Razumov, S. V. [1 ]
Kaptelov, E. Yu [3 ]
Senkevich, S. V. [3 ]
Pronin, I. P. [3 ]
Kozyrev, A. B. [1 ]
机构：
[1] ETU LETI, Dept Phys Elect & Technol, St Petersburg, Russia
[2] Herzen Univ, Dept Phys, St Petersburg, Russia
[3] Ioffe Inst, Div Phys Dielect & Semicond, St Petersburg, Russia
来源：
INTEGRATED FERROELECTRICS | 2016年 / 173卷 / 01期
关键词：
Lead-free ferroelectrics; Ba(Sn; Ti)O-3; microwave applications; tunability; dielectric losses; DIELECTRIC-PROPERTIES; PHASE-TRANSITION;
D O I：
10.1080/10584587.2016.1187055
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Thin films of BaSnxTi1-xO3 composition (Sn/Ti approximate to 50/50) are grown n-situ by RE magnetron deposition onto Pt /Al2O3 substrate, uctural and dielectric properties are optimized by changing substrate temperature. Best thin-film samples have shown a high tunability (about 35) and low dielectric losses attractive for microwave electronics
引用
收藏
页码：140 / 146
页数：7
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