About the measurements of the d33 piezoelectric coefficient of the PZT film -: Si/SiO2/Ti/Pt substrates using an optical cryostat

The paper deals with a measurements of d(33) piezoelectric coefficient of the PZT film on substrate Si/SiO2/Ti/Pt, and its dependence on frequency and voltage in the room temperature. The measurements of the piezoelectric-induced displacements in the temperature range 240 K to 330 K were provided by a double beam miniaturized interferometer that was placed in optical helium cryostat. The PZT films were grown by RF magnetron sputtering. We tested three samples supported from IEMN-DOAE-MIMM (Univ. of Valenciennes). In all cases we observed smaller piezoelectric response than we expected. The d(33) coefficients were approximately 25 pC/N for 40b and 38b samples and about 130 pC/N for 39c sample. The response was nonlinear in applied voltage range and saturation value of electric field is about 100 kV/cm. Coefficient d(33) decreases with decreasing temperature and at 240 K is its value about 90% of value at room temperature.