X-ray diffraction study of AlN/AlGaN short period superlattices

被引：14
|
作者：
Chandolu, A. [1 ]
Nikishin, S. [1 ]
Holtz, M. [1 ]
Temkin, H. [1 ]
机构：
[1] Texas Tech Univ, Nano Tech Ctr, Lubbock, TX 79409 USA
来源：
JOURNAL OF APPLIED PHYSICS | 2007年 / 102卷 / 11期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1063/1.2821358
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Short period superlattices of AlN/Al0.08Ga0.92N with the average AlN content over 60% have been investigated by high resolution x-ray diffraction. The a and c lattice constants verify these structures to be strain relaxed. Monolayer-level interface roughness, caused by the presence of threading dislocations and step-flow growth mode, is simulated and directly compared with the zeroth and +/- 1 satellite peak positions of the rocking curves. It was found that the observed x-ray diffraction data can be adequately described by considering primarily the presence of screw dislocations and step-flow growth mode. (C) 2007 American Institute of Physics.
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页数：5
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