Integrated Test for Silicon Front Ends

被引：15

作者：

Kissinger, Dietmar ^{[1
]}

Laemmle, Benjamin ^{[1
]}

Maurer, Linus ^{[2
]}

Weigel, Robert ^{[1
]}

机构：

[1] Univ Erlangen Nurnberg, Inst Elect Engn, D-91058 Erlangen, Germany

[2] DICE, A-4040 Linz, Austria

来源：

IEEE MICROWAVE MAGAZINE | 2010年 / 11卷 / 03期

关键词：

CMOS; LINEARITY;

D O I：

10.1109/MMM.2010.936076

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ongoing developments in integrated circuit (IC) technology have resulted in fully integrated monolithic systems-on-chip (SoC). The state of the art of todays silicon-based semiconductor technologies, such as the silicon-germanium heterojunction bipolar transistor (SiGe HBT) and the silicon metal-oxide-semiconductor field-effect transistor (MOSFET), allow for the low-cost fabrication of transceiver front-end circuitry with operating frequencies even above 100 GHz [1]. These key elements of silicon high-frequency semiconductor electronics have opened the door for the millimeter-wave consumer market in communication technology and sensor applications. © 2010 IEEE.

引用

页码：87 / 94

页数：8

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