Study on Sensing Properties of Ion-Sensitive Field-Effect-Transistors Fabricated With Stack Sensing Membranes

被引：11

作者：

Lee, Tzu Nien ^{[1
]}

Chen, Henry J. H. ^{[2
]}

Hsieh, Kuang Chien ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Inst Elect Engn, Hsinchu 300, Taiwan

[2] Natl Chi Nan Univ, Dept Elect Engn, Nantou 545, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2016年 / 37卷 / 12期

关键词：

ISFETs; APTES; SAMs; PH-ISFET;

D O I：

10.1109/LED.2016.2619714

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter addresses the characteristics of biosensor made of ion-sensitive field-effect-transistors (ISFETs) with stacked 3-aminopropyltriethoxysilane/SiO2 sensing membranes. These devices exhibit higher sensitivity, lower hysteresis, and lower drift characteristics as compared with the conventional ones made with a simple layer of oxide. Much improved performance makes ISFETs a favorable choice for future bio-sensing applications.

引用

页码：1642 / 1645

页数：4

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