Study on Sensing Properties of Ion-Sensitive Field-Effect-Transistors Fabricated With Stack Sensing Membranes

被引：11
|
作者：
Lee, Tzu Nien [1 ]
Chen, Henry J. H. [2 ]
Hsieh, Kuang Chien [1 ]
机构：
[1] Natl Tsing Hua Univ, Inst Elect Engn, Hsinchu 300, Taiwan
[2] Natl Chi Nan Univ, Dept Elect Engn, Nantou 545, Taiwan
来源：
IEEE ELECTRON DEVICE LETTERS | 2016年 / 37卷 / 12期
关键词：
ISFETs; APTES; SAMs; PH-ISFET;
D O I：
10.1109/LED.2016.2619714
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This letter addresses the characteristics of biosensor made of ion-sensitive field-effect-transistors (ISFETs) with stacked 3-aminopropyltriethoxysilane/SiO2 sensing membranes. These devices exhibit higher sensitivity, lower hysteresis, and lower drift characteristics as compared with the conventional ones made with a simple layer of oxide. Much improved performance makes ISFETs a favorable choice for future bio-sensing applications.
引用
收藏
页码：1642 / 1645
页数：4
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