Factors Determining the Carrier Distribution in InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes

被引：8

作者：

Han, Dong-Pyo ^{[1
]}

Shim, Jong-In ^{[2
]}

Shin, Dong-Soo ^{[3
,4
]}

机构：

[1] Meijo Univ, Fac Sci & Technol, Nagoya, Aichi 4688502, Japan

[2] Hanyang Univ, Dept Elect & Commun Engn, ERICA Campus, Ansan 15588, South Korea

[3] Hanyang Univ, Dept Photon & Nanoelect, ERICA Campus, Ansan 15588, South Korea

[4] Hanyang Univ, Dept Bionanotechnol, ERICA Campus, Ansan 15588, South Korea

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 2018年 / 54卷 / 01期

关键词：

Light-emitting diodes; carrier distribution; multiple quantum well; recombination rate; EFFICIENCY DROOP; PHOTOLUMINESCENCE; TEMPERATURE;

D O I：

10.1109/JQE.2018.2790440

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Factors determining the carrier distribution in InGaN/GaN multiple-quantum-well (MQW) light-emitting diodes (LEDs) are studied via photoluminescence, temperature-dependent electroluminescence spectra, and numerical simulations. Employing a dichromatic LED device, we demonstrate that the carrier recombination rate should be considered playing an important role in determining the carrier distribution in the MQW active region, not just the simple hole characteristics such as low mobility and large effective mass.

引用

页数：7

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