Optical Bistability of a Neodymium-Doped Microchip Laser with Intracavity Saturable Absorber

被引：4

作者：

Yu, Haohai ^{[1
]}

Wang, Zhengping ^{[1
]}

Zhang, Huaijin ^{[1
]}

Wang, Jiyang ^{[1
]}

Zhuang, Shidong ^{[1
]}

Xu, Xinguang ^{[1
]}

机构：

[1] Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China

来源：

APPLIED PHYSICS EXPRESS | 2011年 / 4卷 / 10期

基金：

中国国家自然科学基金;

关键词：

GAS-LASER; CO2-LASER; BEHAVIOR; CRYSTAL;

D O I：

10.1143/APEX.4.102701

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

With a Cr:YAG crystal as the intracavity saturable absorber, the passive Q-switching operation of a diode-pumped Nd:Lu0.8Gd0.2VO4 microchip laser was demonstrated. An obvious optical bistable phenomenon was observed, the width of the bistable region was 0.9 W, and the jump power at the turning point was 160 mW. By using a four-level laser model with a saturable absorber, the theoretically calculated results were observed to agree well with the experimental data. To the best of our knowledge, this is the first time that optical bistablility is achieved in Q-switched neodymium-doped solid-state lasers. (C) 2011 The Japan Society of Applied Physics

引用

页数：3

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