Enhanced thermal stability of Mo film with low infrared emissivity by a TiN barrier layer

被引:11
|
作者
Sun, Binghui [1 ]
Wang, Lei [3 ]
Sun, Ying [1 ]
Gao, Junhua [5 ]
Cao, Hongtao [5 ]
Ren, Jie [1 ]
Cui, Jin [2 ]
Yuan, Xiuliang [1 ]
Li, Aoyu [4 ]
Wang, Cong [2 ]
机构
[1] Beihang Univ, Sch Phys, Beijing 100191, Peoples R China
[2] Beihang Univ, Sch Integrated Circuit Sci & Engn, Beijing 100191, Peoples R China
[3] Univ Sci & Technol Beijing, Dept Phys, Beijing 100083, Peoples R China
[4] Beihang Univ, Sino French Engineer Sch, Beijing 100191, Peoples R China
[5] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Key Lab Addit Mfg Mat Zhejiang Prov, Ningbo 315201, Peoples R China
基金
中国国家自然科学基金;
关键词
Mo film; Thermal emissivity; TiN layer; Diffusion barrier; Infrared reflective layer; CIGS SOLAR-CELLS; THIN-FILMS; OPTICAL-SIMULATION; COATINGS; OPTIMIZATION; PERFORMANCE; GROWTH; MICROSTRUCTURE; PRESSURE; POWER;
D O I
10.1016/j.apsusc.2021.151368
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The infrared reflective layer is one of the most important components of solar selective absorbing coatings (SSACs). The low infrared emissivity of the infrared reflective layer is necessary to reduce the energy losses caused by the thermal radiation from the SSACs. Also, the thermal stability of the infrared reflective layer has a crucial impact on the thermal stability of the entire coatings. In this study, a series of Mo films, as the infrared reflective layer, were deposited on stainless steel (SS) or glass substrates by DC magnetron sputtering. The effects of sputtering parameters on crystal structure, surface morphologies, film resistivity, and infrared emissivity of the Mo films are systematically investigated. The lowest infrared emissivity of the prepared Mo films is 0.06, which can be obtained by optimizing the deposition parameters. And the emissivity could be further decreased to 0.03 by annealing treatment. The insertion of a TiN layer between the Mo layer and the SS substrate can effectively inhibit the elemental diffusion from the SS substrate to the Mo film in vacuum until 700 degrees C, which improves effectively the operating temperature of the Mo film as an infrared reflective layer in SSAC.
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页数:11
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