Analysis on degradation mechanisms of normally-off p-GaN gate AlGaN/GaN high-electron mobility transistor*

被引:1
|
作者
Song, Si-De [1 ]
Wu, Su-Zhen [1 ]
Liu, Guo-Zhu [1 ]
Zhao, Wei [1 ]
Wang, Yin-Quan [1 ]
Wu, Jian-Wei [1 ]
He, Qi [1 ]
机构
[1] 58th Inst Elect Sci & Technol Grp Corp China, Wuxi 214000, Jiangsu, Peoples R China
关键词
high-electron-mobility transistors (HEMTs); stress; degradation; threshold voltage; THRESHOLD VOLTAGE; HEMTS;
D O I
10.1088/1674-1056/abccba
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The degradation mechanisms of enhancement-mode p-GaN gate AlGaN/GaN high-electron mobility transistor was analyzed extensively, by means of drain voltage stress and gate bias stress. The results indicate that: (i) High constant drain voltage stress has only a negligible impact on the device electrical parameters, with a slightly first increase and then decrease in output current; (ii) A negative shift of threshold voltage and increased output current were observed in the device subjected to forward gate bias stress, which is mainly ascribed to the hole-trapping induced by high electric field across the p-GaN/AlGaN interface; (iii) The analyzed device showed an excellent behavior at reverse gate bias stress, with almost unaltered threshold voltage, output current, and gate leakage current, exhibiting a large gate swing in the negative direction. The results are meaningful and valuable in directing the process optimization towards a high voltage and high reliable enhanced AlGaN/GaN high-electron mobility transistor.
引用
下载
收藏
页数:5
相关论文
共 50 条
  • [31] Simulation of a Normally-off HEMT Transistor Based on a GaN/AlGaN with a p-Gate
    Egorkin V.I.
    Zemlyakov V.E.
    Kapaev V.V.
    Kukhtyaeva O.B.
    Kapaev, V.V. (kapaevvv@lebedev.ru), 1600, Pleiades journals (49): : 445 - 451
  • [32] Investigations of the gate instability characteristics in Schottky/ohmic type p-GaN gate normally-off AlGaN/GaN HEMTs
    Zeng, Changkun
    Xu, Weizong
    Xia, Yuanyang
    Pan, Danfeng
    Wang, Yiwang
    Wang, Qiang
    Zhu, Youhua
    Ren, Fangfang
    Zhou, Dong
    Ye, Jiandong
    Chen, Dunjun
    Zhang, Rong
    Zheng, Youdou
    Lu, Hai
    APPLIED PHYSICS EXPRESS, 2019, 12 (12)
  • [33] Gate Reliability of p-GaN Gate AlGaN/GaN High Electron Mobility Transistors
    Ge, Mei
    Ruzzarin, Maria
    Chen, Dunjun
    Lu, Hai
    Yu, Xinxin
    Zhou, Jianjun
    De Santi, Carlo
    Zhang, Rong
    Zheng, Youdou
    Meneghini, Matteo
    Meneghesso, Gaudenzio
    Zanoni, Enrico
    IEEE ELECTRON DEVICE LETTERS, 2019, 40 (03) : 379 - 382
  • [34] Review of technology for normally-off HEMTs with p-GaN gate
    Greco, Giuseppe
    Iucolano, Ferdinando
    Roccaforte, Fabrizio
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2018, 78 : 96 - 106
  • [35] Normally-off AlGaN/GaN HFET with p-type GaN Gate and AlGaN Buffer
    Hilt, O.
    Knauer, A.
    Brunner, F.
    Bahat-Treidel, E.
    Wuerfl, J.
    2010 22ND INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2010, : 347 - 350
  • [36] Normally-off AlGaN/GaN high-electron-mobility transistor using digital etching technique
    Yamanaka, Ryota
    Kanazawa, Toru
    Yagyu, Eiji
    Miyamoto, Yasuyuki
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2015, 54 (06)
  • [37] Influence of traps on the gate reverse characteristics of normally-off high-electron-mobility transistors with regrown p-GaN gate
    Chen, Xin
    Zhong, Yaozong
    Guo, Xiaolu
    Yan, Shumeng
    Zhou, Yu
    Su, Shuai
    Gao, Hongwei
    Zhan, Xiaoning
    Zhang, Zihui
    Bi, Wengang
    Sun, Qian
    Yang, Hui
    APPLIED PHYSICS EXPRESS, 2021, 14 (10)
  • [38] Normally-off AlGaN/GaN high-electron-mobility transistor on Si(111) by recessed gate and fluorine plasma treatment
    Lin, Jyun-Hao
    Huang, Shyh-Jer
    Lai, Chao-Hsing
    Su, Yan-Kuin
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (01)
  • [39] Comparison of Recessed Gate-Head Structures on Normally-Off AlGaN/GaN High-Electron-Mobility Transistor Performance
    Khan, Mansoor Ali
    Heo, Jun-Woo
    Kim, Hyun-Seok
    Park, Hyun-Chang
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2014, 14 (11) : 8141 - 8147
  • [40] High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applications
    Fleury, Clement
    Capriotti, Mattia
    Rigato, Matteo
    Hilt, Oliver
    Wuerfl, Joachim
    Derluyn, Joff
    Steinhauer, Stephan
    Koeck, Anton
    Strasser, Gottfried
    Pogany, Dionyz
    MICROELECTRONICS RELIABILITY, 2015, 55 (9-10) : 1687 - 1691