Analysis on degradation mechanisms of normally-off p-GaN gate AlGaN/GaN high-electron mobility transistor*

被引:1
|
作者
Song, Si-De [1 ]
Wu, Su-Zhen [1 ]
Liu, Guo-Zhu [1 ]
Zhao, Wei [1 ]
Wang, Yin-Quan [1 ]
Wu, Jian-Wei [1 ]
He, Qi [1 ]
机构
[1] 58th Inst Elect Sci & Technol Grp Corp China, Wuxi 214000, Jiangsu, Peoples R China
关键词
high-electron-mobility transistors (HEMTs); stress; degradation; threshold voltage; THRESHOLD VOLTAGE; HEMTS;
D O I
10.1088/1674-1056/abccba
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The degradation mechanisms of enhancement-mode p-GaN gate AlGaN/GaN high-electron mobility transistor was analyzed extensively, by means of drain voltage stress and gate bias stress. The results indicate that: (i) High constant drain voltage stress has only a negligible impact on the device electrical parameters, with a slightly first increase and then decrease in output current; (ii) A negative shift of threshold voltage and increased output current were observed in the device subjected to forward gate bias stress, which is mainly ascribed to the hole-trapping induced by high electric field across the p-GaN/AlGaN interface; (iii) The analyzed device showed an excellent behavior at reverse gate bias stress, with almost unaltered threshold voltage, output current, and gate leakage current, exhibiting a large gate swing in the negative direction. The results are meaningful and valuable in directing the process optimization towards a high voltage and high reliable enhanced AlGaN/GaN high-electron mobility transistor.
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页数:5
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