Radiation-Induced Variable Retention Time in Dynamic Random Access Memories

被引：17

作者：

Goiffon, Vincent ^{[1
]}

Bilba, Teddy ^{[1
]}

Deladerriere, Theo ^{[1
]}

Beaugendre, Guillaume ^{[1
]}

Le Roch, Alexandre ^{[1
]}

Dion, Arnaud ^{[1
]}

Virmontois, Cedric ^{[2
]}

Belloir, Jean-Marc ^{[2
]}

Gaillardin, Marc ^{[3
]}

Jay, Antoine ^{[1
]}

Paillet, Philippe ^{[3
]}

机构：

[1] Univ Toulouse, ISAE SUPAERO, F-31055 Toulouse, France

[2] CNES, F-31401 Toulouse, France

[3] CEA, DAM, DIF, F-91297 Arpajon, France

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2020年 / 67卷 / 01期

关键词：

Bulk defects; dark current random telegraph signal (DC-RTS); double data rate 3 (DDR3); DDR3 low voltage (DDR3L); defect structural fluctuation; displacement damage dose; dynamic random access memory (DRAM); gamma irradiation; gamma-ray; interface states; intermittent stuck bits (ISBs); leakage current; metastable defects; neutron; oxide defects; RTS; synchronous DRAM (SDRAM); total ionizing dose (TID); variable junction leakage (VJL); variable retention time (VRT); RANDOM TELEGRAPH SIGNAL; SINGLE-EVENT DEGRADATION; DISPLACEMENT DAMAGE; IRRADIATED SILICON; NOISE; MECHANISMS; PROTONS; DEFECT; CCDS;

D O I：

10.1109/TNS.2019.2956293

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of gamma-ray and neutron radiations on the variable retention time (VRT) phenomenon occurring in dynamic random access memory (DRAM) is studied. It is shown that both ionizing radiation and nonionizing radiation induce VRT behaviors in DRAM cells. It demonstrates that both Si/SiO2 interface states and silicon bulk defects can be a source of VRT. It is also highlighted that radiation-induced VRT in DRAMs is very similar to the radiation-induced dark current random telegraph signal in image sensors. Both phenomena probably share the same origin, but high-magnitude electric fields seem to play an important role in VRT only. Defect structural fluctuations (without change of charge state) seem to be the root cause of the observed VRT whereas processes involving trapping and emission of charge carriers are unlikely to be a source of VRT. VRT also appears to be the most probable cause of intermittent stuck bits in irradiated DRAMs.

引用

页码：234 / 244

页数：11

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