TiS3 Transistors with Tailored Morphology and Electrical Properties

被引：201
|
作者：
Island, Joshua O. [1 ]
Barawi, Mariam [2 ]
Biele, Robert [3 ]
Almazan, Adrian [4 ]
Clamagirand, Jose M. [2 ]
Ares, Jose R. [2 ]
Sanchez, Carlos [2 ,5 ]
van der Zant, Herre S. J. [1 ]
Alvarez, Jose V. [4 ,5 ,6 ]
D'Agosta, Roberto [3 ,7 ]
Ferrer, Isabel J. [2 ,5 ]
Castellanos-Gomez, Andres [1 ,8 ]
机构：
[1] Delft Univ Technol, Kavli Inst Nanosci, NL-2628 CJ Delft, Netherlands
[2] Univ Autonoma Madrid, MIRE Grp, Dept Fis Mat, E-28049 Madrid, Spain
[3] Univ Basque Country, ETSF Sci Dev Ctr, Dept Fis Mat, E-20018 San Sebastian, Spain
[4] Univ Autonoma Madrid, Dept Fis Materia Condesada, E-28049 Madrid, Spain
[5] Univ Autonoma Madrid, Inst Nicolas Cabrera, E-28049 Madrid, Spain
[6] Univ Autonoma Madrid, IFIMAC, E-28049 Madrid, Spain
[7] Basque Fdn Sci, Ikerbasque, E-48013 Bilbao, Spain
[8] Inst Madrileno Estudios Avanzados Nanociencia IMD, Madrid 28049, Spain
来源：
ADVANCED MATERIALS | 2015年 / 27卷 / 16期
关键词：
density functional theory; exfoliation potential; field-effect transistors; mechanical exfoliation; monolayers; morphology; sulphur vacancy; TiS3; THIN-LAYERS; MOS2; SURFACE; DISULFIDE; GROWTH; STATES; GAP;
D O I：
10.1002/adma.201405632
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
[No abstract available]
引用
收藏
页码：2595 / 2601
页数：7
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