Water in contact with the backside of a silicon substrate enables drilling of high-quality holes through the substrate using ultrashort laser pulses

被引:9
|
作者
Laakso, Miku J. O. [1 ]
Pagliano, Simone [1 ]
Shah, Umer [1 ]
Martensson, Gustaf E. [2 ]
Stemme, Goran [1 ]
Niklaus, Frank [1 ]
机构
[1] KTH Royal Inst Technol, Sch Elect Engn & Comp Sci, Div Micro & Nanosyst, Malvinas Vag 10, S-11428 Stockholm, Sweden
[2] Mycronic AB, Nytorpsvagen 9, S-18353 Taby, Sweden
关键词
HIGH-ASPECT-RATIO; FEMTOSECOND LASER; ABLATION; GLASS; NANOSECOND; EVOLUTION; SHAPE; VIAS; IRRADIATION; GROOVES;
D O I
10.1364/OE.377256
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Holes through silicon substrates are used in silicon microsystems, for example in vertical electrical interconnects. In comparison to deep reactive ion etching, laser drilling is a versatile method for forming these holes, but laser drilling suffers from poor hole quality. In this article, water is used in the silicon drilling process to remove debris and the shape deformations of the holes. Water is introduced into the drilling process through the backside of the substrate to minimize negative effects to the drilling process. Drilling of inclined holes is also demonstrated. The inclined holes could find applications in radio frequency devices. (C) 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
引用
收藏
页码:1394 / +
页数:15
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