Inductively coupled plasma etching of high aspect ratio two-dimensional photonic crystals in Al-rich AlGaAs and AlGaAsSb

被引：10

作者：

Larrue, A. ^{[1
,2
]}

Belharet, D. ^{[1
,2
]}

Dubreuil, P. ^{[1
,2
]}

Bonnefont, S. ^{[1
,2
]}

Gauthier-Lafaye, O. ^{[1
,2
]}

Monmayrant, A. ^{[1
,2
]}

Lozes-Dupuy, F. ^{[1
,2
]}

Moumdji, S. ^{[1
,2
,3
]}

机构：

[1] LAAS, CNRS, F-31077 Toulouse 4, France

[2] Univ Toulouse, UPS, INSA, INP,ISAE,UT1,UTM,LAAS, F-31077 Toulouse 4, France

[3] Univ Montpellier 2, IES, CNRS, UMR 5214,CC067, F-34095 Montpellier, France

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2011年 / 29卷 / 02期

关键词：

CAVITY LASERS; WAVE-GUIDES; HARD MASK; GAAS; FABRICATION; INP; MIRRORS; CHEMISTRY; MODULATOR; SIDEWALL;

D O I：

10.1116/1.3549125

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Planar two-dimensional photonic crystals are key tools for the development of advanced optoelectronic devices. However, their practical realization often requires deep etching of air holes with high aspect ratio. In this article, the authors report on a time-multiplexed inductively coupled plasma reactive ion etching technique, allowing deep etching of AlGaAs and AlGaAsSb heterostructures. Air holes of 130 nm wide and 1.85 mu m deep have been realized in AlGaAs heterostructures with up to 60% Al. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3549125]

引用

页数：7

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