Evidence of Light Guiding in Ion-Implanted Diamond

被引:43
|
作者
Lagomarsino, S. [1 ,2 ]
Olivero, P. [3 ,4 ,8 ]
Bosia, F. [3 ,4 ,8 ]
Vannoni, M. [5 ]
Calusi, S. [6 ,7 ]
Giuntini, L. [6 ,7 ]
Massi, M. [6 ,7 ]
机构
[1] Univ Florence, Dept Energet, I-50136 Florence, Italy
[2] Ist Nazl Fis Nucl, I-50136 Florence, Italy
[3] Univ Turin, Expt Phys Dept, I-10125 Turin, Italy
[4] Univ Turin, Nanostructured Interfaces & Surfaces Ctr Excellen, I-10125 Turin, Italy
[5] CNR, Ist Nazl Ott, I-50125 Florence, Italy
[6] Univ Florence, Dept Phys, I-50019 Florence, Italy
[7] Univ Florence, Ist Nazl Fis Nucl, Sez Firenze, I-50019 Florence, Italy
[8] Ist Nazl Fis Nucl, I-10125 Turin, Italy
关键词
CHANNEL WAVE-GUIDES; REFRACTIVE-INDEX; FABRICATION; PHYSICS;
D O I
10.1103/PhysRevLett.105.233903
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We demonstrate the feasibility of fabricating light-waveguiding microstructures in bulk single-crystal diamond by means of direct ion implantation with a scanning microbeam, resulting in the modulation of the refractive index of the ion-beam damaged crystal. Direct evidence of waveguiding through such buried microchannels is obtained with a phase-shift micro-interferometric method allowing the study of the multimodal structure of the propagating electromagnetic field. The possibility of defining optical and photonic structures by direct ion writing opens a range of new possibilities in the design of quantum-optical devices in bulk single-crystal diamond.
引用
收藏
页数:4
相关论文
共 50 条
  • [31] MOSSBAUER STUDY OF THE AMORPHOUS LAYER IN ION-IMPLANTED DIAMOND
    VANROSSUM, M
    LANGOUCHE, G
    DEBRUYN, J
    DEPOTTER, M
    COUSSEMENT, R
    NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR): : 407 - 411
  • [32] Characterization and mechanical properties of ion-implanted diamond surfaces
    Stock, HR
    Schlett, V
    Kohlscheen, J
    Mayr, P
    SURFACE & COATINGS TECHNOLOGY, 2001, 146 : 425 - 429
  • [33] Formation and characterization of graphitized layers in ion-implanted diamond
    Gippius, AA
    Khmelnitskiy, RA
    Dravin, VA
    Tkachenko, SD
    DIAMOND AND RELATED MATERIALS, 1999, 8 (8-9) : 1631 - 1634
  • [34] Light emission from ion-implanted silicon
    Sun, J. M.
    Helm, M.
    Skorupa, W.
    Schmidt, B.
    Muecklich, A.
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 3, 2009, 6 (03): : 716 - +
  • [35] Light absorption in ion-implanted gallium arsenide
    Danilov, Yu.A.
    Physics, chemistry and mechanics of surfaces, 1995, 11 (05): : 524 - 527
  • [36] Surface Brillouin scattering on annealed ion-implanted CVD diamond
    Motochi, I.
    Naidoo, S. R.
    Mathe, B. A.
    Erasmus, R.
    Aradi, E.
    Derry, T. E.
    Olivier, E. J.
    DIAMOND AND RELATED MATERIALS, 2015, 56 : 6 - 12
  • [37] Finite element analysis of ion-implanted diamond surface swelling
    Bosia, Federico
    Calusi, Silvia
    Giuntini, Lorenzo
    Lagomarsino, Stefano
    Lo Giudice, Alessandro
    Massi, Mirko
    Olivero, Paolo
    Picollo, Federico
    Sciortino, Silvio
    Sordini, Andrea
    Vannoni, Maurizio
    Vittone, Ettore
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2010, 268 (19): : 2991 - 2995
  • [38] Laser-induced phase transitions in ion-implanted diamond
    Kononenko, VV
    Pimenov, SM
    Kononenko, TV
    Konov, VI
    Fischer, P
    Romano, V
    Weber, HP
    Khomich, AV
    Khmelnitskiy, RA
    DIAMOND AND RELATED MATERIALS, 2003, 12 (3-7) : 277 - 282
  • [39] CHANNELING ANALYSIS OF HIGH-TEMPERATURE ION-IMPLANTED DIAMOND
    BRAUNSTEIN, G
    KALISH, R
    NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR): : 691 - 697
  • [40] IMPACT IONIZATION IN SEMICONDUCTOR STRUCTURES MADE OF ION-IMPLANTED DIAMOND
    KONOROVA, EA
    KUZNETSOV, YA
    SERGIENKO, VF
    TKACHENKO, SD
    TSIKUNOV, AV
    SPITSYN, AV
    DANYUSHEVSKII, YZ
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (02): : 146 - 149