Electrical properties of p-type in-situ doped vs. Al-implanted 4H-SiC

被引：3
|
作者：
Pernot, J [1 ]
Contreras, S [1 ]
Camassel, J [1 ]
Robert, JL [1 ]
机构：
[1] CNRS, Etud Semicond Grp, UM2, UMR 5650, F-34095 Montpellier, France
来源：
SILICON CARBIDE AND RELATED MATERIALS 2004 | 2005年 / 483卷
关键词：
p-type; 4H-SiC; aluminium implantation; Hall effect measurements;
D O I：
10.4028/www.scientific.net/MSF.483-485.401
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report a detailed investigation of the electrical properties of p-type 4H-SiC. In the range 100 K-800 K we show that, both, the temperature dependence of the hole concentration and Hall mobility is satisfactorily described using the relaxation time approximation. Performing a detailed comparison of in-situ vs. implantation doping, we evidence an incomplete activation of the dose (about 50 +/- 10 %) with apparition of a large number of compensating centres in the implanted layers.
引用
收藏
页码：401 / 404
页数：4
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