Electrical properties of p-type in-situ doped vs. Al-implanted 4H-SiC

被引：3

作者：

Pernot, J ^{[1
]}

Contreras, S ^{[1
]}

Camassel, J ^{[1
]}

Robert, JL ^{[1
]}

机构：

[1] CNRS, Etud Semicond Grp, UM2, UMR 5650, F-34095 Montpellier, France

来源：

SILICON CARBIDE AND RELATED MATERIALS 2004 | 2005年 / 483卷

关键词：

p-type; 4H-SiC; aluminium implantation; Hall effect measurements;

D O I：

10.4028/www.scientific.net/MSF.483-485.401

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report a detailed investigation of the electrical properties of p-type 4H-SiC. In the range 100 K-800 K we show that, both, the temperature dependence of the hole concentration and Hall mobility is satisfactorily described using the relaxation time approximation. Performing a detailed comparison of in-situ vs. implantation doping, we evidence an incomplete activation of the dose (about 50 +/- 10 %) with apparition of a large number of compensating centres in the implanted layers.

引用

页码：401 / 404

页数：4

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