Sources of Single Event Effects in the NVIDIA Xavier SoC Family under Proton Irradiation

被引:4
|
作者
Rodriguez-Ferrandez, Ivan [1 ,2 ]
Tali, Maris [3 ]
Kosmidis, Leonidas [1 ,2 ]
Rovituso, Marta [4 ]
Steenari, David [3 ]
机构
[1] Univ Politecn Catalunya UPC, Barcelona, Spain
[2] Barcelona Supercomp Ctr BSC, Barcelona, Spain
[3] European Space Agcy ESA, Noordwijk, Netherlands
[4] Holland PTC, Delft, Netherlands
关键词
D O I
10.1109/IOLTS56730.2022.9897236
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
In this paper we characterise two embedded GPU devices from the NVIDIA Xavier family System-on-Chip (SoC) using a proton beam. We compare the NVIDIA Xavier NX and Industrial devices, that respectively target commercial and automotive applications. We evaluate the Single-Event Effect (SEE) rate of both modules and their sub-components, both the CPU and GPU, using different power modes, and we try for the first time to identify their exact sources using the on-line testing facilities included in their ARM based system. Our conclusion is that the most sensitive part of the CPU complex of the SoC is the tag array of the various cache structures, while no errors were observed in the GPU, probably because of its fast execution compared to the CPU part of the application during the radiation campaign.
引用
收藏
页数:7
相关论文
共 50 条
  • [21] Exploration of single-event effects under defocused laser irradiation: Analysis of charge collection in bipolar devices
    Hou, Hengbo
    Yue, Jiansong
    Li, Zhankai
    Hu, Ning
    Wei, Qiang
    SOLID-STATE ELECTRONICS, 2025, 223
  • [22] Single Event Effects and Total Ionizing Dose Radiation Testing of NVIDIA Jetson Orin AGX System on Module
    Slater, Windy S.
    Rutherford, Benjamin B. W.
    Mee, Jesse K.
    Pinson, Ryan E.
    Gruber, Matthew
    Sabogal, Daniel
    Troxel, Ian A.
    2023 IEEE RADIATION EFFECTS DATA WORKSHOP, REDW IN CONJUNCTION WITH 2023 NSREC, 2023, : 109 - 114
  • [23] Effects of total dose irradiation on single-event upset hardness
    Schwank, J. R.
    Shaneyfelt, M. R.
    Felix, J. A.
    Dodd, P. E.
    Baggio, J.
    Ferlet-Cavrois, V.
    Paillet, P.
    Hash, G. L.
    Flores, R. S.
    Massengill, L. W.
    Blackmore, E.
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2006, 53 (04) : 1772 - 1778
  • [24] Sensitivity investigation of 100-MeV proton irradiation to SiGe HBT single event effect
    Feng, Ya-Hui
    Guo, Hong-Xia
    Liu, Yi-Wei
    Ouyang, Xiao-Ping
    Zhang, Jin-Xin
    Ma, Wu-Ying
    Zhang, Feng-Qi
    Bai, Ru-Xue
    Ma, Xiao-Hua
    Hao, Yue
    CHINESE PHYSICS B, 2024, 33 (01)
  • [25] System-on-chip single event effect hardening design and validation using proton irradiation
    Yang, Weitao
    Li, Yang
    Guo, Gang
    He, Chaohui
    Wu, Longsheng
    NUCLEAR ENGINEERING AND TECHNOLOGY, 2023, 55 (03) : 1015 - 1020
  • [26] Single event upset characterization of the Pentium® MMX and Pentium® II microprocessors using proton irradiation
    Hiemstra, DM
    Baril, A
    Dettwiler, M
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1999, 46 (06) : 1453 - 1460
  • [27] Single event upset characterization of the Pentium MMX and Pentium II microprocessors using proton irradiation
    Hiemstra, David M.
    Baril, Allan
    IEEE Transactions on Nuclear Science, 1999, 46 (6 I): : 1453 - 1460
  • [28] Sensitivity investigation of 100-MeV proton irradiation to SiGe HBT single event effect
    冯亚辉
    郭红霞
    刘益维
    欧阳晓平
    张晋新
    马武英
    张凤祁
    白如雪
    马晓华
    郝跃
    Chinese Physics B, 2024, (01) : 464 - 472
  • [29] Proton irradiation effects on InGaP/GaAs single heterojunction bipolar transistors
    Liu, Min
    Zhang, Yuming
    Lu, Hongliang
    Zhang, Yimen
    Zhang, Jincan
    Wei, Zhichao
    Li, Chenghuan
    SOLID-STATE ELECTRONICS, 2014, 96 : 9 - 13
  • [30] SINGLE-EVENT, ENHANCED SINGLE-EVENT AND DOSE-RATE EFFECTS WITH PULSED PROTON-BEAMS
    XAPSOS, MA
    MASSENGILL, LW
    STAPOR, WJ
    SHAPIRO, P
    CAMPBELL, AB
    KERNS, SE
    FERNALD, KW
    KNUDSON, AR
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1987, 34 (06) : 1419 - 1424