Comparison of hybrid pixel detectors with Si and GaAs sensors

被引：6
|
作者：
Lindner, M
Fischer, P
Florin, S
Göppert, R
Hausmann, J
Ludwig, J
Runge, K
Schwarz, C
Söldner-Rembold, A
Wermes, N
机构：
[1] Univ Bonn, Inst Phys, D-53115 Bonn, Germany
[2] Univ Freiburg, Fak Phys, D-79104 Freiburg, Germany
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2001年 / 466卷 / 01期
关键词：
pixel detector; photon counting; GaAs; silicon; X-ray imaging; CCE; active layer;
D O I：
10.1016/S0168-9002(01)00826-9
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Hybrid pixel detectors for medical X-ray imaging applications with Si and GaAs sensors are compared. Both sensor types are bump-bonded onto the MPEC single photon counting pixel read out chip. The image homogeneity and count rate of the two assemblies are compared. For the GaAs assembly the active layer thickness and charge collection efficiency have been measured. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：63 / 73
页数：11
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