Broad area semiconductor lasers with Gaussian-like current distribution - art. no. 682415

被引：0
|
作者：
Zhongliang Qiao [1 ]
Jing Zhang [1 ]
Chunling Liu [1 ]
Yanping Yao [1 ]
Huang Bo [1 ]
Jianli Ma [1 ]
Xin Gao [1 ]
Baoxue Bo [1 ]
机构：
[1] Changchun Univ Sci & Technol, State Key Lab High Power Semicond Lasers, Changchun 130022, Peoples R China
来源：
SEMICONDUCTOR LASERS AND APPLICATIONS III | 2008年 / 6824卷
关键词：
broad area semiconductor lasers; near limited diffraction; photon gain; beam quality factor;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
According to the principle of carrier diffusion within injection stripe, we fabricated a new type of high power single quantum well broad area semiconductor laser. The designed device has a special current injection stripe which results in a Gaussian-like photon gain laterally. The output power is up to 3.75 watt when the beam quality factor M-2 is 10.6 in continuous-wave operation, and the beam quality factor M-2 is 5.4 when the output power is 2.5 watt at the same operation condition. The beam quality of broad area semiconductor single quantum well laser has been improved obviously by the designed device.
引用
收藏
页码：82415 / 82415
页数：7
相关论文
共 50 条
  • [1] Effects of injected atomic coherence in broad-area lasers -: art. no. 033811
    Calderón, OG
    Cabrera, E
    Carreño, F
    Antón, MA
    Melle, S
    Guerra, JM
    PHYSICAL REVIEW A, 2005, 72 (03):
  • [2] Influence of current noise on the relaxation oscillation dynamics of semiconductor lasers - art. no. 071107
    Van der Sande, G
    Soriano, MC
    Yousefi, M
    Peeters, M
    Danckaert, J
    Verschaffelt, G
    Lenstra, D
    APPLIED PHYSICS LETTERS, 2006, 88 (07)
  • [3] Current profiling in broad-area semiconductor lasers
    Voignier, V
    Sailliot, C
    Houlihan, J
    O'Callaghan, JR
    Wu, G
    Huyet, G
    McInerney, JG
    PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES X, 2002, 4646 : 336 - 343
  • [4] Cavity optimization of optically pumped broad-area microcavity lasers -: art. no. 151119
    Barbay, S
    Ménesguen, Y
    Sagnes, I
    Kuszelewicz, R
    APPLIED PHYSICS LETTERS, 2005, 86 (15) : 1 - 3
  • [5] Time-resolved dynamics of two-dimensional transverse patterns in broad area lasers -: art. no. 213904
    Encinas-Sanz, F
    Melle, S
    Calderón, OG
    PHYSICAL REVIEW LETTERS, 2004, 93 (21)
  • [6] From nearly tilted waves to cavity phase solitons in broad area lasers with squeezed vacuum -: art. no. 163901
    Calderón, OG
    Cabrera, E
    Antón, MA
    Gonzalo, I
    Carreño, F
    Guerra, JM
    PHYSICAL REVIEW LETTERS, 2004, 92 (16) : 163901 - 1
  • [7] Emission wavelength stabilization in broad area lasers coupled to fiber Bragg gratings - art. no. 68761H
    Sverdlov, B.
    Mohrdiek, S.
    Pawlik, S.
    Matuschek, N.
    Lichtenstein, N.
    HIGH-POWER DIODE LASER TECHNOLOGY AND APPLICATIONS VI, 2008, 6876 : H8761 - H8761
  • [8] Nonlinear dynamics of semiconductor lasers with active optical feedback -: art. no. 016206
    Bauer, S
    Brox, O
    Kreissl, J
    Sartorius, B
    Radziunas, M
    Sieber, J
    Wünsche, HJ
    Henneberger, F
    PHYSICAL REVIEW E, 2004, 69 (01): : 10
  • [9] Beyond the ABC: Carrier recombinations in semiconductor lasers - art. no. 61151T
    Hader, J.
    Moloney, J. V.
    Koch, S. W.
    Physics and SImulation of Optoelectronic Devices XIV, 2006, 6115 : T1151 - T1151
  • [10] Self-organization in semiconductor lasers with ultrashort optical feedback -: art. no. 043902
    Ushakov, O
    Bauer, S
    Brox, O
    Wünsche, HJ
    Henneberger, F
    PHYSICAL REVIEW LETTERS, 2004, 92 (04) : 4
12345