Field Effect Transistors For Fast Terahertz Detection and Imaging

被引：0
|
作者：
Boubanga-Tombet, S. [1 ,2 ]
Knap, W. [2 ]
Otsuji, T. [2 ]
机构：
[1] Tohoku Univ, RIEC, Aoba Ku, 2-1-1 Katahira, Sendai, Miyagi 9808577, Japan
[2] Univ Montpellier 2, Etud Semicond Grp, CNRS, F-34095 Montpellier, France
来源：
35TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ 2010) | 2010年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Recent results on THz detection by FETs are reported. THz Imaging with FET and detection in quantizing magnetic field. Results of THz Imaging show that FETs arrays are good candidate for real time imaging. In magnetic field we report an enhancement of signal at the cyclotron resonance condition.
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页数：2
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