Response of Thermo- Electro-Magneto Semiconductor Elastic Medium to Photothermal Excitation Process with Thomson Influence

被引:8
|
作者
Yasein, Moh'd [1 ,2 ]
Lotfy, Kh [3 ,4 ]
Mabrouk, N. [1 ,5 ]
El-Bary, A. A. [6 ]
Hassan, W. [7 ,8 ]
机构
[1] Northern Border Univ, Coll Sci, POB 1631, Ar Ar, Saudi Arabia
[2] Arab Acad Sci Technol & Maritime Transport, POB 1029, Alexandria, Egypt
[3] Zagazig Univ, Fac Sci, Dept Math, POB 44519, Zagazig, Egypt
[4] 4Univ Monastir, Fac Sci Monastir, Dept Phys, Lab Interfaces & Mat Avances, Ave Environm, Monastir 5019, Tunisia
[5] Hashemite Univ, Dept Math, Zarqa 13133, Jordan
[6] Taibah Univ, Fac Sci, Dept Math, Madinah, Saudi Arabia
[7] Qassim Univ, Coll Sci & Arts, Dept Math, POB 931, Buridah 51931, Al Mithnab, Saudi Arabia
[8] Port Said Univ, Fac Engn, Math & Phys Dept, Port Said, Egypt
关键词
Photothermal theory; Thomson effect; Magnetic field; Normal mode method; Thermoelectric; Semiconductors; GENERALIZED THERMOELASTICITY; WAVES; TEMPERATURE; FREQUENCY;
D O I
10.1007/s12633-019-00373-5
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The effect of Thomson heating of semiconductor medium is studied. Analytical discussions are made in the presence of thermoelectricity theory and magnetic field in context of Photothermal transport process. The interactions between plasma, thermoelectric, electromagnetic and elastic waves are taken into consideration. The governing equations are investigated in two dimensional deformations of homogenous, isotropic medium. The density of charge is taken as a function of time only of the induced electric current. The normal mode technique is used to obtain the physical quantities field under investigation. Some electro-mechanical loads and thermal effect through recombination process are applied on the free surface of semiconductor elastic medium. The distributions of physical fields in this phenomenon are discussed and represented graphically. The results have been discussed under the effect of thermoelectric parameter and Thomson parameter.
引用
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页码:2789 / 2798
页数:10
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