Silicon nanowire synthesis by a vapor-liquid-solid approach

被引：10

作者：

Mao, A

Ng, HT

Nguyen, P

McNeil, M

Meyyappan, M ^{[1
]}

机构：

[1] NASA, Ames Res Ctr, Ctr Nanotechnol, Moffett Field, CA 94035 USA

[2] San Jose State Univ, Dept Chem Engn, San Jose, CA 95192 USA

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2005年 / 5卷 / 05期

关键词：

silicon nanowires; VLS approach; vertical transistors; nanowire synthesis; catalyzed growth; vertical nanowires;

D O I：

10.1166/jnn.2005.107

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Synthesis of silicon nanowires is studied by using a vapor-liquid-solid growth technique. Silicon tetrachloride reduction with hydrogen in the gas phase is used with gold serving as catalyst to facilitate growth. Only a narrow set of conditions of SiCl4 concentration and temperature yield straight nanowires. High concentrations and temperatures generally result in particulates, catalyst coverage and deactivation, and coatinglike materials.

引用

页码：831 / 835

页数：5

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