Silicon nanowire synthesis by a vapor-liquid-solid approach

被引：10
|
作者：
Mao, A
Ng, HT
Nguyen, P
McNeil, M
Meyyappan, M [1 ]
机构：
[1] NASA, Ames Res Ctr, Ctr Nanotechnol, Moffett Field, CA 94035 USA
[2] San Jose State Univ, Dept Chem Engn, San Jose, CA 95192 USA
来源：
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2005年 / 5卷 / 05期
关键词：
silicon nanowires; VLS approach; vertical transistors; nanowire synthesis; catalyzed growth; vertical nanowires;
D O I：
10.1166/jnn.2005.107
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Synthesis of silicon nanowires is studied by using a vapor-liquid-solid growth technique. Silicon tetrachloride reduction with hydrogen in the gas phase is used with gold serving as catalyst to facilitate growth. Only a narrow set of conditions of SiCl4 concentration and temperature yield straight nanowires. High concentrations and temperatures generally result in particulates, catalyst coverage and deactivation, and coatinglike materials.
引用
收藏
页码：831 / 835
页数：5
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